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登録日: 2022年5月12日

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Download/Watch movie/series online: Download or play with one of the following video sharing applications, and/or the official YIFY download site. Now Download/stream full episodes/seasons of your favorite YIFY episodes/series. Watch Hindi Movie Streaming Online Free HD. Download YIFY Hindi Movie YIFY is a website that has your interests at heart. We all love to watch Hindi Movie Online Free.The present invention relates to self-aligned transistor contacts in a semiconductor device. In the design of integrated circuits, one of the limiting factors in the size of the circuit may be the size of contact openings. Conventional integrated circuits have horizontal and vertical contacts that connect to the active devices on the device. Some of these contacts need to be large enough to withstand the deposition of insulator layers during the fabrication of the active devices. The active devices, however, do not extend all the way to the surface of the integrated circuit. Thus, the device contact openings are formed above the surface of the device, and the contacts are formed within the contact openings. Some of these contacts, however, have a large aspect ratio. As circuit densities increase, contact openings may be placed closer together. As a result, contact openings may need to be formed with narrower tolerances than is currently available. This may be particularly true for very large scale integrated (VLSI) circuits. These circuit layouts may require over one hundred thousand contact openings. Contact openings with widths of 90 nm or less may be needed for these circuits. In these contact openings, aspect ratios of greater than 4:1 may be required. In the prior art, contact openings may be filled with conductive material. In order to fill the contact openings, the bottom of the contact opening may be cleared. Conductive material may be deposited into the bottom of the contact opening, and the top of the contact opening may be sealed, e.g., by tungsten deposition. The tungsten material is then planarized to form a metal contact. The aspect ratio of the contact may affect the uniformity of the deposition of the metal contact and the subsequent planarization. For example, the opening in the conductive material may be so deep as to allow the conductive material to conform to the underlying conductive material, resulting in voids in the center of the opening. In another embodiment, the aspect ratio of the contact opening may be very large, e.g., greater than 100:1. This

 

 


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